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SA3600 low voltage dual-band rf front-end product specification supersedes data of 1999 march 18 1999 nov 02 integrated circuits
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 2 1999 nov 02 8532183 22617 description the SA3600 is an integrated dual-band rf front-end that operates at both cellular (amps and tdma) and pcs (tdma) frequencies, and is designed in a 20 ghz f t bicmos processequbic2. the low-band (lb) receiver is a combined low-noise amplifier (lna) and mixer. the lna has a 1.7 db noise figure (nf) at 881 mhz with 17 db of gain and an iip3 of 7 dbm. the wide-dynamic range mixer has a 9.5 db nf at 881 mhz with 9.5 db of gain and an iip3 of +6 dbm. the high-band (hb) receiver is a combined low-noise amplifier (lna) and mixer, with the low-band and high-band mixers sharing the same mixer output. the lna has a 2.2 db nf at 1960 mhz with 16 db of gain and an iip3 of 5 dbm. the wide-dynamic range mixer has a 8.5 db nf at 1960 mhz with 8.5 db of gain and an iip3 of +5.5 dbm. features ? low current consumption: lb i cc = 14.5 ma; hb i cc = 20.5 ma ? outstanding low- and high-band noise figure ? lnas with gain control (30 db gain step) ? lo input and output buffers ? selectable frequency doubler ? on chip logic for network selection and power down ? very small outline package applications ? 800 to 1000 mhz analog and digital receivers ? 1800 to 2000 mhz digital receivers ? portable radios ? mobile communications equipment pin configuration sr01596 hb_lna_out gnd hb_lna_in v cc hb_mxr+_in hb_mxr_in pd1 gnd hb_vco_out pd2 gnd lb_lna_out gnd lb_lna_in v cc lb_mxr_in gnd mxr+_out gnd mxr_out lb_vco_in pd3 hb_vco_in lb_vco_out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 ordering information type number package type number name description version SA3600 tssop24 plastic thin shrink small outline package; 24 leads; body width 4.4 mm sot3551 pin descriptions pin no. pin name description pin no. pin name description 1 hb_lna_out highband lna output 13 hb_vco_in highband vco input 2 gnd ground 14 pd3 power down control 3 3 hb_lna_in highband lna input 15 lb_vco_in lowband vco input 4 vcc power supply 16 gnd ground 5 hb_mxr+_in highband mixer positive input 17 mxr_out mixer negative output 6 hb_mxr_in highband mixer negative input 18 mxr+_out mixer positive output 7 pd1 power down control 1 19 gnd ground 8 gnd ground 20 lb_mxr_in lowband mixer input 9 hb_vco_out highband vco buffered output 21 v cc power supply 10 pd2 power down control 2 22 lb_lna_in lowband lna input 11 gnd ground 23 gnd ground 12 lb_vco_out lowband vco buffered output 24 lb_lna_out lowband lna output
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 3 block diagram x2 SA3600 sr01594 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 hb_lna_out gnd hb_lna_in v cc hb_mxr+_in hb_mxr_in pd1 gnd hb_vco_out pd2 gnd lb_lna_out gnd lb_lna_in v cc lb_mxr_in gnd mxr+_out gnd mxr_out lb_vco_in pd3 hb_vco_in lb_vco_out figure 1. block diagram mode select logic pd1 pd2 pd3 operating mode cel lna cel mxr pcs lna pcs mxr x2 dbl lb lo o/p hb lo o/p 0 0 0 sleep mode off off off off off off off 0 0 1 tx mode, lo lowband buffer off off off off off on off 0 1 0 rx mode cellular, low gain off on off off off on off 0 1 1 rx mode cellular, high gain on on off off off on off 1 0 0 rx mode pcs, low gain, x2 off off off on on on off 1 0 1 rx mode pcs, high gain, x2 off off on on on on off 1 1 0 rx mode pcs, low gain, no x2 off off off on off off on 1 1 1 rx mode pcs, high gain, no x2 off off on on off off on
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 4 operation the SA3600 is a highly integrated dual-band radio frequency (rf) front-end integrated circuit (ic) targeted for tdma applications. this ic is split into separate low-band (lb) and high-band (hb) receivers. the lb receiver contains a low noise amplifier (lna) and mixer that are designed to operate in the cellular frequency range (869894mhz). the hb receiver contains an lna and mixer that are designed to operate in the pcs frequency range (19301990 mhz). the SA3600 also contains a frequency doubler that can drive the hb mixer local oscillator (lo) port, allowing a single-band voltage controlled oscillator (vco) to be used to drive both mixers. modes for bypassing the doubler are also provided, in the case where a dual-band vco is used. the SA3600 has eight modes of operation that control the lnas, mixers, lo buffers and doubler. the select pins (pd1,2,3) are used to change modes of operation. the internal select logic powers the device down (0,0,0), turns on the lb lo buffer for use in transmit mode (0,0,1), enables cellular receive mode for high and low gain (0,1,x), enables pcs receive mode for high and low gain both without doubler (1,1,x) and with doubler (1,0,x). low-band receive section the lb circuit contains a lna followed by a wide dynamic range active mixer. in a typical application circuit, the lna output uses an external pull-up inductor to vcc and is ac coupled. the mixer if outputs are differential and are combined with the high-band if mixer outputs thereby eliminating the need for extra output pins. external inductors and capacitors can be used to convert the differential mixer outputs to single-ended. furthermore, the lna provides two gain settings: high gain (17db) and low gain (15 db). the desired gain state can be selected by setting the logic pins (pd1,pd2,pd3) appropriately. high-band receive section the hb circuit contains a lna followed by a gilbert cell mixer with differential inputs. the lna output uses an internal pull-up inductor to vcc , which eliminates the need for an external pull-up. the mixer if outputs are differential and are combined with the low-band if mixer outputs thereby eliminating the need for extra output pins. similar to the lb lna, the hb lna has two gain settings: high gain (16 db) and low gain (15 db). control logic section pins pd1, pd2, and pd3, control the logic functions of the SA3600. the pd1 selects between lb and hb operations. in lb receive mode, the lb lna is in high gain mode (or on) when pd1,2,3 are (0,1,1). in all other modes, the lb lna is off. the lb mixer is on when pd1,2,3 are (0,1,x). in all other modes, the lb mixer is off. during transmit mode when pd1,2,3 are (0,0,1), the lb lo buffer is on, enabling use of the lo signal for the transmitter. in hb receive mode, the hb lna is in high gain mode (or on) when pd1,2,3 are (1,x,1). in all other modes, the hb lna is off. the hb mixer is on when pd1,2,3 are (1,x,x), and is off in all other modes. the on-chip frequency doubler (x2) is on in (1,0,x) modes. when the frequency doubler is on, the input signal from the lb lo buffer is doubled in frequency, which can then be used to drive the hb mixer lo port. the frequency doubler can also be bypassed in modes (1,1,x), in which case the hb mixer is driven directly by an external 2 ghz lo signal. local oscillator (lo) section the lb lo buffers are on for all modes except sleep mode, when pd1,2,3 are (0,0,0), and for hb receive mode without doubler, pd1,2,3 are (1,1,x). the hb lo buffers are on only when pd1,2,3 are (1,1,x). the pd1,2,3 pins are used to power-up/down all lo input buffers, which minimizes the pulling effect on the external vco when entering receive or transmit mode.
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 5 absolute maximum ratings 1 symbol parameter limits units symbol parameter min. max. units v cc supply voltage 0.3 +4.5 v v in voltage applied to any other pin 0.3 v cc +0.3 v p d power dissipation, t amb = +25 c (still air) 555 mw t j max maximum junction temperature 150 c p max power input/output +20 dbm i max dc current into any i/o pin 10 +10 ma t stg storage temperature range 65 +150 c t o operating temperature 40 +85 c notes: 1. ic is protected against esd voltages up to 500 v (human body model). dc electrical characteristics unless otherwise specified, all input/output ports are single-ended. dc parameters v cc = +3.0 v, t amb = +25 c unless otherwise specified symbol parameter test conditions tester limits unit symbol parameter pd1 pd2 pd3 min typ max unit sleep mode 0 0 0 0.1 1 m a tx mode, lo lowband buffer 0 0 1 4.3 5.5 ma rx mode cellular, low gain 0 1 0 10.1 12 ma i cc rx mode cellular, high gain 0 1 1 14 16.5 ma i cc rx mode pcs, low gain, x2 1 0 0 17.5 21 ma rx mode pcs, high gain, x2 1 0 1 23.5 28 ma rx mode pcs, low gain, no x2 1 1 0 14.5 17.5 ma rx mode pcs, high gain, no x2 1 1 1 20.5 24.5 ma v ih input high voltage 0.5xv cc v cc +0.3 v v il input low voltage 0.3 0.2xv cc v i bias input bias current logic 1 or logic 0 5 +5 m a
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 6 ac electrical characteristics v cc = +3.0 v, f rf = 881 mhz, f lo = 963 mhz, t amb = +25 c, unless otherwise specified symbol parameter test conditions limits unit symbol parameter test conditions min. 3 s typ +3 s max. unit cascaded gain section g sys lb lna + mixer, high gain filter loss = 3 db 20.5 23.5 26.5 db g byp lb lna + mixer, low gain filter loss = 3 db 11.5 8.5 5.5 db low-band lna section f rf rf input frequency range 869 894 mhz g ena small signal gain enabled 16.1 17 17.9 db nf ena noise figure enabled 1.5 1.7 1.9 db iip3 ena input 3rd order intercept point 8.1 7 5.9 dbm p1db ena input 1 db compression point 20 dbm g byp small signal gain bypassed 15 db nf byp noise figure bypassed 15 db iip3 byp input 3rd order intercept point 15 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db t sw enable/disable speed 1 20 m s low-band mixer section f rf rf input frequency range 869 894 mhz f if if output frequency range 70 200 mhz f lo lo input range 939 1100 mhz g mxr small signal gain p lo = 5 dbm 9 9.5 10 db nf mxr ssb noise figure p lo = 5 dbm 8.6 9.5 10.4 db iip3 mxr input 3rd order intercept point p lo = 5 dbm 5.1 6 6.9 dbm p1db mxr input 1 db compression point p lo = 5 dbm 14 dbm p lo lo input power range 7 5 3 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db two-tone spurious rejection: p lo = 5 dbm 2-tone 2(f rf f tx ), f rf f tx =f if /2 f rf =890.0 mhz @36 dbm f tx =848.9 mhz @20 dbm 110 dbm 3(f rf f tx ), f rf f tx =f if /3 f rf =876.3 mhz @36 dbm f tx =848.9 mhz @20 dbm 110 rflo rf to lo isolation 25 db lorf lo to rf isolation 40 db t sw enable/disable speed 1 20 m s low-band lo buffer section p lo lo input frequency range 939 1100 mhz p in lo input power 50 w matched lb_vco_in 7 5 3 dbm p out lo output power 50 w matched lb_vco_out 8 7.5 7 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db harmonic content p lo = 5 dbm 20 dbc t sw enable/disable speed 1 20 m s
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 7 ac electrical characteristics v cc = +3.0 v, f rf = 1960 mhz, f lo = 2042 mhz, t amb = +25 c, unless otherwise specified symbol parameter test conditions limits unit symbol parameter test conditions min. 3 s typ +3 s max. unit cascaded gain section g sys hb lna + mixer, high gain filter loss = 3 db 18.5 21.5 24.5 db g byp hb lna + mixer, low gain filter loss = 3 db 12.5 9.5 6.5 db high-band lna section f rf rf input frequency range 1930 1990 mhz g ena small signal gain enabled 15 16 17 db nf ena noise figure enabled 1.9 2.2 2.5 db iip3 ena input 3rd order intercept point 6.5 5 3.5 dbm p1db ena input 1 db compression point 14 dbm g byp small signal gain bypassed 15 db nf byp noise figure bypassed 15 db iip3 byp input 3rd order intercept point 15 dbm z in input return loss 2 50 w system, ena and byp 10 db z out output return loss 50 w system, ena and byp 10 db t sw enable/disable speed 1 20 m s high-band mixer section f rf rf input frequency range 1930 1990 mhz f if if output frequency range 70 200 mhz f lo lo input range 2000 2190 mhz g mxr small signal gain p lo = 5 dbm 7.8 8.5 9.2 db nf ssb noise figure, doubler off p lo = 5 dbm 7.6 8.5 9.4 db nf mxr ssb noise figure, doubler on p lo = 5 dbm 8.1 9 9.9 db iip3 input 3rd order intercept point, doubler off p lo = 5 dbm 4 5.5 7 dbm iip3 mxr input 3rd order intercept point, doubler on p lo = 5 dbm 1.9 3 4.1 dbm p1db mxr input 1 db compression point p lo = 5 dbm 14 dbm if/2 rej half-if spurious rejection 2(f rf f lo ), f rf f lo =f if /2, doubler off f rf =1972.0 mhz @36 dbm 90 dbm if/2 rej . half-if spurious rejection 2(f rf f lo ), f rf f lo =f if /2, doubler on rf f lo =2013.1 mhz @5 dbm 85 dbm if/3 rej. third-if spurious rejection 3(f rf f lo ), f rf f lo =f if /3 f rf =1985.7 mhz @36 dbm f lo =2013.1 mhz @5 dbm 114 dbm two-tone spurious rejection: p lo = 5 dbm, f rf f tx , f rf f tx =f if f rf =1933.0 mhz @36 dbm f tx =1850.8 mhz @20 dbm 70 2-tone 2(f rf f tx ), f rf f tx =f if /2 f rf =1951.0 mhz @36 dbm f tx =1909.9 mhz @20 dbm 115 dbm 3(f rf f tx ), f rf f tx =f if /3 f rf =1937.3 mhz @36 dbm f tx =1909.9 mhz @20 dbm 125 p lo lo input power range 7 5 3 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db rflo rf to lo isolation 40 db lorf lo to rf isolation 30 db t sw enable/disable speed 1 20 m s
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 8 ac electrical characteristics v cc = +3.0 v, t amb = +25 c, unless otherwise specified symbol parameter test conditions limits units symbol parameter test conditions min. 3 s typ +3 s max. units high-band lo buffer section p lo lo input frequency range 2000 2190 mhz p in lo input power 50 w matched hb_vco_in 7 5 3 dbm p out lo output power 50 w matched hb_vco_out 8.8 8 7.2 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db harmonic content p lo = 5 dbm 20 dbc t sw enable/disable speed 1 20 m s x2 lo doubler section f lo lo input frequency 1000 1095 mhz p in lo input power 50 w matched lb_vco_in 7 5 3 dbm z in input return loss 2 50 w system 10 db z out output return loss 2 50 w system 10 db t sw enable/disable speed 1 20 m s notes: 1. dependent on external components. 2. external matching required.
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 9 pin no pin mnemonic dc v equivalent circuit 1 hb lna out sr01786 v cc 3 hb lna in 0.8 sr01787 v bias 5k 4 v cc v cc v bias 5 hb mxr+ in 1.2 6 hb mxr in 1.2 sr01788 7 pd1 10 pd2 apply externally 14 pd3 sr01789 9 hb vco out pull-up externally to v cc sr01790 v cc v cc
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 10 pin no equivalent circuit dc v pin mnemonic 12 lb vco out v cc 0.2 v sr01791 v cc 13 hb vco in 1.9 sr01792 v bias v bias v cc 15 lb vco in 1.0 sr01793 v cc 17 mxr out pull-u p externally to v cc 2 pf v cc v cc 18 mxr+ out pull - u externally to v cc sr01794 2 pf
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 11 pin no equivalent circuit dc v pin mnemonic 20 lb mxr in 1.2 sr01795 v bias v cc 22 lb lna in 0.8 sr01796 v bias 5k v cc 24 lb lna out pull-up externally to v cc sr01797 v cc
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 12 performance characteristics v cc = +3.0 v, t amb = +25 c; unless otherwise specified. icc (ua) 0.20 0.15 0.10 00.0 +25 c +85 c 40 c sr02201 v cc (v) 2.5 3.0 3.5 4.0 0.05 figure 2. i cc versus v cc (mode 000 sleep mode) v cc (v) 4.8 4.4 4.2 4.0 +25 c +85 c 40 c sr02202 2.5 3.0 3.5 4.0 icc (ma) 5.0 4.6 figure 3. i cc versus v cc (mode 001 transmit mode) 11.0 10.5 10.0 9.5 2.5 3.0 3.5 4.0 icc (ma) sr02203 +85 c 40 c, +25 c v cc (v) figure 4. i cc versus v cc (mode 010 lb receive, low gain) 15.0 14.0 13.0 12.0 11.0 sr02204 +25 c +85 c 40 c 16.0 2.5 3.0 3.5 4.0 v cc (v) icc (ma) figure 5. i cc versus v cc (mode 011 lb receive, high gain) 19.0 18.5 18.0 17.5 17.0 sr02205 +85 c, +25 c 40 c v cc (v) icc (ma) 16.5 2.5 3.0 3.5 4.0 figure 6. i cc versus v cc (mode 100 hb receive, low gain, doubler on) 26.5 25.0 23.5 22.0 sr02206 +25 c +85 c 40 c 2.5 3.0 3.5 4.0 20.5 icc (ma) v cc (v) figure 7. i cc versus v cc (mode 101 hb receive, high gain, doubler on)
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 13 sr02207 +25 c +85 c 40 c 2.5 3.0 3.5 4.0 icc (ma) 16.0 15.5 15.0 14.5 14.0 v cc (v) figure 8. i cc versus v cc (mode 110 hb receive, low gain, doubler off) v cc (v) 22.0 18.0 16.0 sr02208 +25 c +85 c 40 c 2.5 3.0 3.5 4.0 20.0 24.0 icc (ma) figure 9. i cc versus v cc (mode 111 hb receive, high gain, doubler off) frequency (mhz) gain (db) 18.0 17.5 17.0 16.0 865 870 875 880 885 890 895 900 sr02209 +25 c +85 c 40 c 16.5 figure 10. lb lna gain versus frequency frequency (mhz) 13.0 15.0 16.0 17.0 18.0 865 870 875 880 885 890 895 900 low gain (db) sr02210 +25 c +85 c 40 c 14.0 figure 11. lb lna low gain versus frequency frequency (mhz) nf (db) sr02211 +25 c +85 c 40 c 865 870 875 880 885 890 895 900 3.0 2.5 2.0 1.5 1.0 figure 12. lb lna noise figure versus frequency (high gain mode) frequency (mhz) 4.0 6.0 8.0 10.0 865 870 875 880 885 890 895 900 iip3 (dbm) sr02212 +25 c +85 c 40 c figure 13. lb lna iip3 versus frequency (high gain mode)
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 14 frequency (mhz) 1 db (dbm) 18.0 19.0 20.0 21.0 sr02213 +25 c +85 c 40 c 865 870 875 880 885 890 895 900 22.0 figure 14. lb lna 1 db compression versus frequency (high gain mode) frequency (mhz) 1920 1930 1940 1950 1960 1970 1980 1990 2000 sr02214 +25 c +85 c 40 c 11.0 12.0 13.0 14.0 15.0 16.0 17.0 1 db (dbm) figure 15. hb lna 1 db compression versus frequency (high gain mode) frequency (mhz) 17.0 16.5 16.0 15.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 sr02215 +25 c +85 c 40 c 15.5 gain (db) figure 16. hb lna gain versus frequency frequency (mhz) 13.0 15.0 16.0 17.0 18.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 low gain (db) sr02216 +25 c +85 c 40 c 14.0 12.0 figure 17. hb lna low gain versus frequency frequency (mhz) 3.0 2.5 2.0 1.5 1920 1930 1940 1950 1960 1970 1980 1990 2000 iip3 (dbm) sr02217 +25 c +85 c 40 c 1.0 figure 18. hb lna noise figure versus frequency (high gain mode) frequency (mhz) 0.0 2.0 4.0 6.0 10.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 iip3 (dbm) sr02218 +25 c +85 c 40 c 8.0 figure 19. hb lna iip3 versus frequency (high gain mode)
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 15 frequency (mhz) 11.0 10.0 9.0 8.0 7.0 865 870 875 880 885 890 895 900 gain (db) sr02219 +25 c +85 c 40 c figure 20. lb mixer conversion gain versus frequency frequency (mhz) 12.0 11.0 10.0 9.0 8.0 865 870 875 880 885 890 895 900 nf (db) sr02220 +25 c +85 c 40 c 7.0 figure 21. lb mixer noise figure versus frequency frequency (mhz) 10.0 8.0 6.0 4.0 sr02221 +25 c +85 c 40 c iip3 (dbm) 2.0 0.0 865 870 875 880 885 890 895 900 figure 22. lb mixer input ip3 versus frequency frequency (mhz) 12.0 13.0 14.0 15.0 16.0 865 870 875 880 885 890 895 900 1 db (dbm) sr02222 +25 c +85 c 40 c figure 23. lb mixer 1 db compression versus frequency frequency (mhz) 10.0 8.0 7.0 6.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 sr02224 +25 c +85 c 40 c gain (db) 9.0 figure 24. hb mixer conversion gain versus frequency, doubler off frequency (mhz) 11.0 10.0 9.0 8.0 7.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 nf (db) sr02225 +25 c +85 c 40 c figure 25. hb mixer noise figure versus frequency, doubler off
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 16 frequency (mhz) iip3 (dbm) 10.0 4.0 2.0 0.0 sr02226 +25 c +85 c 40 c 1920 1930 1940 1950 1960 1970 1980 1990 2000 8.0 6.0 figure 26. hb mixer input ip3 versus frequency, doubler off frequency (mhz) 13.0 13.5 14.0 14.5 15.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 1 db (dbm) sr02227 +25 c +85 c 40 c figure 27. hb mixer 1 db compression versus frequency, doubler off frequency (mhz) halfif spur (dbm) 86.0 88.0 90.0 92.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 sr02223 +25 c +85 c 40 c 94.0 96.0 figure 28. hb mixer half-if spur versus frequency (input = 36 dbm, doubler off) frequency (mhz) 82.0 84.0 86.0 88.0 90.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 halfif spur (dbm) sr02228 +25 c +85 c 40 c figure 29. hb mixer half-if spur versus frequency (input = 36 dbm, doubler on) frequency (mhz) 10.0 9.0 8.0 7.0 6.0 gain (db) sr02229 +25 c +85 c 40 c 1920 1930 1940 1950 1960 1970 1980 1990 2000 figure 30. hb mixer conversion gain versus frequency, doubler on frequency (mhz) 12.0 11.0 10.0 9.0 8.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 nf (db) sr02230 +25 c +85 c 40 c 7.0 figure 31. hb mixer noise figure versus frequency, doubler on
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 17 frequency (mhz) 6.0 5.0 4.0 1.0 0.0 iip3 (dbm) sr02231 +25 c +85 c 40 c 3.0 2.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 figure 32. hb mixer input ip3 versus frequency, doubler on frequency (mhz) iip2 (dbm) 30.0 28.0 26.0 24.0 1920 1930 1940 1950 1960 1970 1980 1990 2000 +25 c +85 c 40 c sr02232 figure 33. hb mixer input ip2 versus frequency, doubler on frequency (mhz) lo output power (dbm) 5.0 6.0 7.0 8.0 950 955 960 965 970 975 980 sr02233 +25 c +85 c 40 c 9.0 10.0 figure 34. lb lo output power versus frequency (mode 010) frequency (mhz) lo output power (dbm) 6.0 7.0 8.0 9.0 2010 2020 2030 2040 2050 2060 2070 2080 sr02234 +25 c +85 c 40 c 10.0 11.0 figure 35. hb lo output power versus frequency (mode 110)
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 18 sr02235 hb_lna_out gnd hb_lna_in v cc hb_mxr+_in hb_mxr_in pd1 gnd hb_vco_out pd2 gnd lb_lna_out gnd lb_lna_in v cc lb_mxr_in gnd mxr+_out gnd mxr_out lb_vco_in pd3 hb_vco_in lb_vco_out 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 pmu pmu 10 k w 0.01 m f 220 pf rf source 10 k w pmu 100 pf pmu 10 k w 100 pf 220 pf 220 pf 5.6 nh 3 db pad pmu 1 k w 0.1 pf pmu 100 pf 220 pf 10 nh rf meas. 0.1 m f pmu 1 k w 4.7 nh 100 pf pmu 10 k w rf meas. pmu 10 nh 220 pf 1.8 pf 6.8 pf pmu 10 k w rf source pmu 0.01 m f 100 pf 12 nh pmu 10 k w 3 db pad 220 pf 10 nh 18 nh 470 nh 8.2 pf 8.2 pf 10 pf 470 nh rf meas. pmu 100 pf 0.01 m f rf source pmu 10 k w 18 pf 4.7 nh 0.1 m f 1 k pmu 2.7 pf rf source pmu 10 k w figure 36. SA3600 production test circuit schematic
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 19 sr02236 lblna_out gnd lblna_in v cc lbmix_in gnd mixer_out-p gnd lbvco_in pd3 hbvco_in hblna_out gnd hblna_in v cc hbmix_in-p hbmix_in-n pd1 gnd hbvco_out pd2 gnd lbvco_out x2 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 l12 ul r4 10k r11 000 l19 ul r9 ul l18 toko 8.2nh r8 330 r10 10 c37 10nf j1 sma j2 sma j3 sma j4 sma j5 sma j12 v cc SA3600 j11 sma j6 sma j7 sma j8 sma 82mhz if j9 sma j10 sma hblout hblin hbmin hbloout lbloout v cc gnd r6 10 c26 100nf c25 100pf c38 100pf pd3 c30 2.2pf l9 120nh c27 6.8pf c21 100pf l13 2.7nh c31 8.2pf 0402 mixer_out-n c32 8.2pf 0402 c23 100pf r3 10k l6 180nh l7 180nh l8 120nh mixout c22 1nf c20 27pf c28 6.8pf c33 1pf c18 1nf lbmin lblin lblout c19 27pf c12 1.5pf l16 8.2nh c13 100pf c34 10nf r2 10 c16 100pf c16 100nf l15 22nh c11 1.2pf c10 5.6pf r7 10 c24 22pf l10 10nh tx mode, lo lb buffer rx mode cell, lo gain rx mode cell, hi gain rx mode pcs, hi gain x2 rx mode pcs, lo gain x2 rx mode pcs, hi gain no x2 rx mode pcs, lo gain no x2 sleep mode mode select pd1 pd2 pd3 0 0 0 0 1 1 1 1 0 0 1 1 0 0 1 1 0 1 0 1 0 1 0 1 pd2 pd1 l11 ul l2 2.7nh l5 1.8nh l3 2.7nh r1 10 r12 000 c3 100nf c4 100pf c1 0.5pf c2 100pf l4 1.8nh c5 100pf c6 1.8pf c6 100pf c7 1.8pf c9 100pf figure 37. SA3600 application circuit (f if = 82 mhz)
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 20 table 1. low-band lna s-parameters (high gain mode) freq (mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 21 table 2. low-band lo input (pin 15) and output (pin 12) s-parameters freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 22 table 2. low-band lo input (pin 15) and output (pin 12) s-parameters (continued) freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 23 table 3. mixer output s-parameters both pins (17, 18) freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 24 table 4. low-band mixer input s-parameters freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 25 table 5. high-band lna s-parameters freq (mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 26 table 6. high-band lo input (pin 13) and output (pin 9) s-parameters freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 27 table 6. high-band lo input (pin 13) and output (pin 9) s-parameters (continued) freq(mhz) |s11| (u) philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 28 tssop24: plastic thin shrink small outline package; 24 leads; body width 4.4 mm sot355-1
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 29 notes
philips semiconductors product specification SA3600 low voltage dual-band rf front-end 1999 nov 02 30 definitions short-form specification e the data in a short-form specification is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values definition e limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the dev ice at these or at any other conditions above those given in the characteristics sections of the specification is not implied. exposure to limi ting values for extended periods may affect device reliability. application information e applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. disclaimers life support e these products are not designed for use in life support appliances, devices or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use i n such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes e philips semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. philips semiconductors ass umes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or m ask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right in fringement, unless otherwise specified. philips semiconductors 811 east arques avenue p.o. box 3409 sunnyvale, california 940883409 telephone 800-234-7381 ? copyright philips electronics north america corporation 1999 all rights reserved. printed in u.s.a. date of release: 11-99 document order number: 9397-750-06558

data sheet status objective specification preliminary specification product specification product status development qualification production definition [1] this data sheet contains the design target or goal specifications for product development. specification may change in any manner without notice. this data sheet contains preliminary data, and supplementary data will be published at a later date. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. this data sheet contains final specifications. philips semiconductors reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. data sheet status [1] please consult the most recently issued datasheet before initiating or completing a design.

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